| 摘要 |
PURPOSE:To prevent the generation of a spike phenomenon even when the density of integration is increased by interposing an insulating film with the exception of a channel region at sections where a source region and a drain region are in contact with a semiconductor substrate. CONSTITUTION:An Si oxide film is formed on an Si substrate, and the oxide films 22 are left only to sections functioning as source and drain regions through a photoetching technique. A p type Si single crystal layer 23 is shaped on the exposed section of the substrate 21 through a gas thermal decomposition method, etc. while polycrystalline Si layers 24, 25 are formed on the oxide films 22. The layer 23 is oxidized to shape a field oxide film 26. A gate oxide film 27 is formed, and a gate poly Si layer 28 is shaped through the oxide film 27. As is implanted to the Si layers 24, 26 while using the layer 26 and the layer 28 as masks to form the source region 24 and the drain region 25 reaching to the oxide films 22. A protective film 31 is shaped, contact holes 33-35 are formed by employing a photosensitive resin mask 32, and a gate wiring 36, a source wiring 37 and a drain wiring 38 are formed, thus obtaining an MOST in which a spike phenomemon is not generated. |
