| 摘要 |
PURPOSE:To check the change of properties of a mask according to ion implantation, and to facilitate removal of the mask according to the etching at manufacture of a semiconductor device by a method wherein a plasma Si nitride film formed according to the plasma chemical vapor deposition method is used as a mask for ion implantation. CONSTITUTION:A plasma Si nitride film 5 is laminated on a semiconductor element. Then the part other than the region to be performed with ion implantation is covered with a resist 6. Then the film 5 is etched using the resist 6 as a mask. After the resist 6 is removed, the film 5 remaining in the ion implanting region is removed. Ion implantation is performed using the film 5 formed in such a way as a mask to form a source 9 and a drain 10. By using the manufacturing method such as mentioned above, the plasma Si nitride film enabled to be used for ion implantation with favorable controllability. The change of properties of the film thereof is not generated according to ion implantation, and the film can be removed easily according to etching. |
