| 摘要 |
PURPOSE:To contrive to curtail sharply exposing time to be necessitated for exposure having high resolving power by a method wherein a high resolving power exposure process to expose a pattern having high resolving power, and a subexposure process to project a beam of small quantity on a substance to be exposed are combined. CONSTITUTION:High resolving power exposure to project a beam 1 on a wafer 6 through a mask 3 possessing a mask pattern 4 is performed. A subexposure process to project a beam 2 to a sensitizer 5 by the proper irradiation dose of the irradiation dose D0 or less to be decided according to the sensitizer 5 and development, etc. without passing through the mask 3 is combined to before, after or both of before and after of the process thereof. When the irradiation dose of the sum of the irradiation dose projected by the subexposure process thereof, and the irradiation dose projected by the high resolving power exposure process exceeds the irradiation dose D0, the sensitizer 5 is exposed selectively to the beam not absorbed to the pattern 4, and a fine pattern is formed after development. By using the subexposure process like this together, exposing time can be curtailed sharply.
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