发明名称 Method of selectively forming an insulation layer.
摘要 <p>@ An insulation layer (43) is selectively formed by exposing the surface of a workpiece (41) to an atmosphere comprising a mixture of a halogen-based gas and a raw gas containing a compoundable element chemically bondable with an element of a material constituting surface layer of the workpiece (41) to form an insulating compound. The surface layer of the workpiece (41) is formed of a non-insulating material, such as a metallic material or a semiconductor material. Light rays are directly irradiated on the selected region or regions of the surface of the workpiece (41) through the atmosphere of the gaseous mixture, thereby dissociating the halogen-based gas. As a result, a layer (43) comprising the insulating compound is formed on the selected region of the surface of the workpiece (41) on which the light rays have been directly irradiated.</p>
申请公布号 EP0162711(A2) 申请公布日期 1985.11.27
申请号 EP19850303599 申请日期 1985.05.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HORIOKA, KEIJI C/O PATENT DIVISION;OKANO, HARUO C/O PATENT DIVISION;SEKINE, MAKOTO C/O PATENT DIVISION
分类号 C04B41/45;C04B41/81;C23C8/04;C23C16/04;H01L21/316;H01L21/32;H01L21/762;(IPC1-7):H01L21/314;C23C8/36 主分类号 C04B41/45
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