| 摘要 |
The present invention relates to a piezoelectric element device. More particularly, the piezoelectric element device includes a substrate, an IDT arranged on the substrate, a connection electrode which is arranged on the substrate and is electrically connected to the IDT, a sidewall which is formed on the outer part of the IDT to generate a cavity included in the IDT on the substrate, a cover which is formed on the upper part of the sidewall, a connection terminal which penetrates the sidewall or the cover, is formed along the inner surface or outer surface of the sidewall, and is electrically connected to the connection electrode, and a reinforcement layer which does not overlap the connection terminal in the upper part of the cover. The area of the reinforcement layer is equal to or less than 50% of the area of the cover. So, pressure-resistant properties of the piezoelectric element device can be improved. |
