| 摘要 |
PURPOSE:To enable implantation of a large current beam to be performed by installing a hollow coil between an ion source and a sample base which supports the sample and performing first-direction scanning and second-direction scanning by feeding an alternating current to the coil while moving the sample base. CONSTITUTION:An ion implantation device for implanting a given ion upon a semiconductive base plate is formed by placing an implantation base plate 5 in the direction in which the beam of an ion source 1 such as a coaxial microwave ion source which has an improved beam purity moves straightforward, and installing a hollow coil 6 for beam deflection between the ion source 1 and the plate 5. The beam 3 is moved right and left by feeding an alternating current to the coil 16 while the base plate 5 is mechanically moved perpendicularly to the paper surface, thereby homogeneously irradiating a beam upon the base plate 5. Accordingly, an ion implantation device which can perform ion implantation with high intensity but not so high beam purity can be obtained by greatly minimizing the beam loss and simplifying the structure. |
