| 摘要 |
PURPOSE:To realize a fine semiconductor device having high performance by thinning the thickness of an electrode film in an electrode section for a high-performance active element and thickening the thickness of a wiring film in a wiring section requiring low resistance. CONSTITUTION:In a bipolar type transistor, a base region 16, an emitter region 17 and a collector electrode leading-out region 15 are formed selectively in an silicon substrate 11. Electrode wirings 13, 13', 14, 18 connected to said each region are shaped through opening sections bored to an insulating film 12 coating the surface of the silicon substrate 11. The base region 16 and the emitter region 17 can be fined for improving performance and the electrode sections 13, 14 in the vicinity of the regions 16, 17 by making their film thickness thinner than other electrodes and wiring sections 13', 18. On the other hand, other electrode wiring sections 13', 15 keep comparatively thick film thickness, and the lowering of resistance is realized. Accordingly, an integrated circuit device having high performance can be realized. |
