| 摘要 |
PURPOSE:To form the contour of light-emitting ranges and the arrangement of centers on the light emission of each light-emitting element in straight lines by moving and shaping opening sections in diffusion stopping regions corresponding ti a plurality of the light-emitting elements in the direction that the opening sections deny light-emitting region sections in the lower sections of the diffusion stopping regions through lateral diffusion. CONSTITUTION:A plurality of opening sections 1 are shaped on a GaAsPonGaAs substrate, and Zn is diffused selectively to form light-emitting regions 2. Metallic electrodes 3 are shaped, and used as bias voltage supply sections. The light-emitting regions 2 are formed as the results of lateral diffusions toward the lower sections of diffusion stopping layers from the opening sections 1, and the ratios of the distances of lateral diffusions to diffusion depth are determined by the presence of buffer films to impurity diffusion and the conditions of the buffer films. The distances of lateral diffusions are computed in order to solve trouble in which the centers of the light-emitting regions 2 and the opening sections 1 are biassed to one side, and the positions of the opening sections are moved previously in the direction that trouble due to lateral diffusions is eliminated so that the luminescent centers of a plurality of the light-emitting elements are arranged on a straight line. |
