| 摘要 |
PURPOSE:To enable register cells to execute the simultaneous reading and writing by inputting complementary signals to a pair of write lines so as to execute writing to register cells and reading out logical informatin to plural read lines different from the write lines. CONSTITUTION:Read lines B11 and B12 are precharged at high levels, and at the time of reading, one or both of read word lines W11 and W12 are set to high levels, and a read n-MOSFET is conducted. Then the selected read line B11 or a voltage of the read line B12 is changed corresponding to a voltage of a terminal N1 or that of a terminal N2, and read actions are executed. When a memory voltage of the terminal N1 is a positive logic and the voltage of the terminal N2 is negative logic, positive logical information and negative logical informtion are read out to the line 11 and the line B12, respectively. |
