发明名称 3D INTEGRATION USING Al-Ge EUTECTIC BOND INTERCONNECT
摘要 Provided herein is an apparatus including a first CMOS wafer and a second CMOS wafer. A eutectic bond connects the first CMOS wafer to the second CMOS wafer. The eutectic bond includes aluminum and germanium, and the eutectic bond has a melting point which is lower than the melting point of aluminum and the melting point of germanium.
申请公布号 WO2016130722(A1) 申请公布日期 2016.08.18
申请号 WO2016US17418 申请日期 2016.02.10
申请人 INVENSENSE, INC. 发明人 SMEYS, Peter;MAGHSOUDNIA, Mozafar
分类号 H01L23/485;H01L21/60 主分类号 H01L23/485
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