发明名称 |
3D INTEGRATION USING Al-Ge EUTECTIC BOND INTERCONNECT |
摘要 |
Provided herein is an apparatus including a first CMOS wafer and a second CMOS wafer. A eutectic bond connects the first CMOS wafer to the second CMOS wafer. The eutectic bond includes aluminum and germanium, and the eutectic bond has a melting point which is lower than the melting point of aluminum and the melting point of germanium. |
申请公布号 |
WO2016130722(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
WO2016US17418 |
申请日期 |
2016.02.10 |
申请人 |
INVENSENSE, INC. |
发明人 |
SMEYS, Peter;MAGHSOUDNIA, Mozafar |
分类号 |
H01L23/485;H01L21/60 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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