| 发明名称 |
Integrated electron circuits having Schottky field effect transistors of P- and N-type |
| 摘要 |
PCT No. PCT/SE82/00093 Sec. 371 Date Nov. 3, 1982 Sec. 102(e) Date Nov. 3, 1982 PCT Filed Mar. 29, 1982 PCT Pub. No. WO82/03498 PCT Pub. Date Oct. 14, 1982.Electronic circuit containing at least one Schottky field effect transistor with contact elements having different Schottky barrier heights.
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| 申请公布号 |
US4554569(A) |
申请公布日期 |
1985.11.19 |
| 申请号 |
US19820441530 |
申请日期 |
1982.11.03 |
| 申请人 |
TOVE, PER-ARNE;BOHLIN, KJELL;STOLT, LARS;NORDE, HERMAN |
发明人 |
TOVE, PER-ARNE;BOHLIN, KJELL;STOLT, LARS;NORDE, HERMAN |
| 分类号 |
H01L27/06;H01L29/47;H01L29/78;H01L29/80;H01L29/812;H01L29/872;(IPC1-7):H01L29/48;H01L27/02;H01L29/56 |
主分类号 |
H01L27/06 |
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