摘要 |
PURPOSE:To enable image formation using a monochromatic coherent light by arranging an a-SiGe layer having a specified Ge concn. distribution and a photoconductive a-Si layer on a substrate in this order from it and incorporating a conductivity governing substance in at least one of them. CONSTITUTION:The first layer 1002 contg. a-SiGe and the second photoconductive layer 1003 contg. a-Si are formed in this order on the substrate 1001 having on the surface a large number of protuberances formed by overlaying subsidiary peaks on main peaks on the section obtained by cutting the substrate 1001 at the prescribed position to obtain a light receiving layer 1000 having multilayer structurae. At least one of the layers 1002, 1003 contains the conductivity governing substance. The layer 1002 contains Ge in a distribution nonuniform in the layer thickness direction. Such a surface of the substrate 1001 enhances the adhesion of the layer 1000, and prevent light interference effect. Said layer structure of the layer 1000 enhances electric, optical, and photoconductive characteristic, high voltage resistance, and resistance characteristics to environmental conditions. |