| 摘要 |
PURPOSE:To achieve high speed operation, by forming a metal oxide layer at a boundary between a substrate and a high-melting-point metal layer on the side wall of a gate electrode, reducing the resistance in an impurity region on the surface of the substrate, and suppressing the decrease in mutual conductance. CONSTITUTION:On a p type silicon substrate 21, an oxide film 22 and a polycrystal silicon gate electrode 23 are formed. Phosphorus ions are implanted and n type impurity regions 24a and 24b are formed. An SiO2 film 25' and an Mo layer 26' are formed only on the side walls of the gate electrode 23. Arsenic ions are implanted and n type impurity layers 27a and 27b are formed. A source region 28 and a drain region 29 are formed. Heat treatment is performed, and an MoSi layers 30a and 30b are formed on the surface of the substrate 21, which is contacted with the Mo layer 26'. The remaining Mo layer 26' is removed and an interlayer insulating film 31 and Al taking-out wirings 33a and 33b are formed. Thus an MOS type transistor is obtained. The surface resistances of the impurity regions 24a and 24b can be reduced by the MoSi layers 30a and 30b. |
