| 摘要 |
Pulse heating of semiconductor bodies 8 may be achieved by means of a sealable length of microwave waveguide 2 which can be pressurised or vented 6 as desired and into which microwave energy is directed for a predetermined time. The microwave heating can be employed in various semiconductor processes such as high pressure oxidation of silicon, pulsed thermal annealing or dopant reactivation by pulse heating. <IMAGE> |
