| 摘要 |
PURPOSE:To prevent a wire from being disconnected by difference in level, by depositing a first metallic layer so as to contain an aperture of an insulation layer and by depositing a second metallic layer after etching the first layer witha corrosion-resisting film provided on an aperture. CONSTITUTION:An aperture 5 is formed in an insulation layer 3 of an MOS semiconductor element so as to pass through the same and to reach a poly-Si layer 4 and a diffusion layer 2. A first metallic layer 6 is then vapor deposited thereon. A corrosion-resisting film 7 is selectively formed in a recess in the metallic layer 6 corresponding to the aperture 5, and the metallic layer 6 is then etched away. Thus the metallic layer 6' is left in the aperture 5 only and the upper surface of the aperture is flattened. After removing the corrosion-resisting layer 7, a second metallic film 8 is deposited thereon. According to this method, disconnecting of a wire, which would be caused by difference in level, is completely eliminated. |
