发明名称 HYSTERESIS CIRCUIT
摘要 PURPOSE:To obtain a hysteresis having a sufficient width even when the supply voltage is low, by using an enhancement type MOS transistor which is made to operate as a ratio circuit when input signals change from a high level to a low level by earthing its source. CONSTITUTION:The titled circuit operates as ratio circuit for a depletion type MOS transistor MD1 and enhancement type MOS transistors ME2-ME4 when input signals Vi2 change from a low level to a high level, and operates as ratio circuit for the depletion type MOS transistor MD1 and enhancement type MOS transistors ME2, ME3, and ME5 when the input signals change from the high level to the low level. The source of the transistor ME5 is used with its source being earthed and the threshold when the input signals change from the high level to the low level is hardly affected by the supply voltage. Therefore, a hysteresis characteristic with a sufficient width can be obtained even when the supply voltage is low and noises carried by the input signals can be reduced.
申请公布号 JPS60227510(A) 申请公布日期 1985.11.12
申请号 JP19840083122 申请日期 1984.04.25
申请人 NIPPON DENKI KK 发明人 NAKAMURA MASAHIRO
分类号 H03K3/353;H03K3/3565 主分类号 H03K3/353
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