| 摘要 |
<p>PURPOSE:To directly read accuracy of size after formation of pattern in the photo etching process only with a microscope without using a fine measuring gauge by arranging a plurality of inspection patterns to be etched where the opposing two sides are parallel and sequentially changing the width of each inspection pattern with known size. CONSTITUTION:The size inspection pattern is formed, for example, with parallel arrangement of the rectangular patterns 3 of which widths are sequentially widened as W, 2W, 3W, 4W, 5W, the punched rectangular patterns 4 of which widths are sequantially windened as W, 2W, 3W, 4W, 5W and the numeral patterns from 1 to 5 which can be recognized respectively corresponding to the width and location of such rectangular patterns. As a result to photo etching using such mask pattern, if the recognized region is for example etched with reduction of width of W, the rectangular patterns corresponding to numerals 1 and 2 among the rectangular patterns 3 is erased and the rectangular patterns corresponding to numerals 3, 4, 5 are reduced in the width by 2W respectively and becomes to have the width of W, 2W, 3W. Moreover, the width of the punched rectangular pattern 4 is widened by 2W respectively than the initial pattern width.</p> |
