| 摘要 |
PURPOSE:To obtain a device which enable the guard ring effect without the process of Be injection by lowering pressure resistance using InGaAsP crystal, by a method wherein, in the planar type A.P.D. formation by imbedding construction, InP crystal layers for carrier multiplying are made two layers construction of an InP layer and an InGaAsP layer. CONSTITUTION:On a crystal (111) N<+>-InP base plate of a base plate 10, as buffer layers, a buffer layer 11, an InP layer, a light absorbing layer 12 and an anti-melt back layer 13, and for the carrier multiplying layers, an N-InP layer 14 and an N-InGaAsP layer 15 are liquid phase growed successively. Subsequently, the mesa etching is carried out, an SiN film 16 which is formed by the CVD method being used as a mask, then the SiN film is removed using hydrofluoric acid. Then an imbedding layer is grown. The light receiving element which is manufactured like this, is that light sensitivity generates only at the part of the light receiving part, and the sufficient guard ring effect is obtained. |
