| 摘要 |
PURPOSE:To expand the freedom of selection of a resistance value and to make a substrate occupying area small, by providing a resistor element, wherein at least one of a depth from the surface of a substrate in the impurity introducing region, which is exposed on the surface of the substrate, or the impurity concentration in the region, forms slanted distribution. CONSTITUTION:Boron ions (B<+>) are introduced in an Si substrate 1 by an ion implantation method. Said ion implantations are performed by, e.g., three times. For example, the length of the long side of an ion implanting window, which is provided in a resist mask 2a is made to be about 3mum and, a B<+> ion accelerating voltage is made to be Ea=100kV at the first time. At the second time, the length of the ion implanting window of a resist mask 2b is made to be about 6mum and the B<+> ion accelerating voltage is made to be Ea=60kV. At the third time, the total length of the ion implantation of a resist mask 2c is made to be 10mum, which is the total length of the region, and the B<+> ion accelerating voltage is made to be Ea=30kV. The resist mask 2c at the third time is exfoliated and removed. Then activating heat treatment is performed. An impurity introduced region 3, where the depth is obliquely distributed by said heat treatment, is activated. An SiO2 film 4 is simultaneously formed. Windows are provided e.g., at four places in the SiO2 film 4, and electrodes 5 are formed. |
