| 摘要 |
PURPOSE:To obtain excellent contact property between electrode wirings and diffused layers and the like, by forming contact holes in an insulating film, thereafter depositing a conducting film on the entire surface, etching the film so that the film remains only on the inner walls of the contact holes, and forming electrode wirings on the contact holes. CONSTITUTION:Contact holes 18a and 18b are formed on a CVD SiO2 film 15. Then an Mo film 19 is deposited on the entire surface by a chemical vapor growing method. The film is made to remain in a taper shape on the side walls of the contact holes 18a and 18b by RIE. Then Al electrode wirings 20a and 20b are formed. Therefore, wire breakdown at the step parts as experience in conventional device does not occur in the Al electrode wirings 20a and 20b. The wirings can be connected to a gate electrode 13 and a diffused layer 14 electrically excellently. |
