| 摘要 |
PURPOSE:To prevent characteristics of a semiconductor device from deteriorating owing to invasion of impurities, to improve operativity due to simple process, and to prevent charged phenomenon from occurring, by flowing charged particles which are irradiated over the semiconductor device with electron ray exposure, outside the semiconductor device through a conductive layer and a conductive contacting stylus. CONSTITUTION:Coated over a main surface of a semiconductor substrate 1 constituting a semiconductor device is a conductive film 8 over which a photosensitive film 4 is coated which is resistant to etchant or etching gas for etching the conductive film 8. After a conductive contacting stylus 9 is mounted which has one end contacting the conductive film 8 through the photosensitive film 4 from the upper portion of the semiconductor substrate 1 and the other end connecting with a ground terminal, the photosensitive film 4 is exposed with electron rays. In this way, the irradiated charged-particles are flowed from the conductive film 8 through the contacting stylus and the conductive wafer supporter 6' to ground terminal when electron rays are irradiated over the semiconductor substrate 1, so that effect of the charged particles can be eliminated in the manufacturing process of the semiconductor device. |
