| 摘要 |
PURPOSE:To improve electrostatic breakdown strength in an output circuit side without deteriorating output characteristics, by providing a protecting circuit in which diodes and resistors are provided in parallel with a pair of transistors that constitutes an inverter at the final stage of the output circuit. CONSTITUTION:Between the source (VDD side) and the output node n1 of an N-channel type MOSFETQn, a resistor R2 in a P<+> type diffused layer, is connected in series so that the resistor R2 is located between a diode d2 and the source terminal of the MOSFETQn. The resistor is provided together with the diode d2, which is formed between a P type well region 2 and an N type diffused region 3b (a drain region of the MOSFETQn) as a parasitic form. Between the source (GND side) and the output anode n1 of a P-channel MOSFETQp, a substrate resistor R1 is connected in series so that the resistor R1 is located between a diode d1 and the source terminal of the MOSFETQp. The resistor is provided together with the diode d1, which is formed between a P type diffused layer 7b (a darin region of the MOSFETQp) and an N type semiconductor substrate 1 as a parasitic form. |
