发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the generation of voids on the sealed part of the titled device by a method wherein the base on which a cavity part will be formed or the cross sectional shape of the groove part of a cap is formed in circular shape, instead of the square shape heretofore in use. CONSTITUTION:A semiconductor element 2 is mounted on the center part of a square-shaped base 1, and a groove part 3 to be used to fix the element 2 is provided. Said groove part 3 is formed into circular shape. Accordingly, the internal pressure is not concentrated at the corner part, it is dispersed along the circumference, the inner pressure is uniformly applied in complete uniformity to the internal circumferential surface of a cavity part. As a result, the generation of voids and leakage defect can be prevented, thereby enabling to improve the reliability of the semiconductor device.
申请公布号 JPS60223142(A) 申请公布日期 1985.11.07
申请号 JP19840078459 申请日期 1984.04.20
申请人 HITACHI SEISAKUSHO KK 发明人 HONDA ATSUSHI;MIWA TAKASHI
分类号 H01L23/02;H01L23/057;H01L23/13 主分类号 H01L23/02
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