| 摘要 |
PURPOSE:To enable to form a microscopic emitter without using a highly precise photoengraving process by a method wherein a polysilicon emitter of microscopic width is formed on a main surface of a semiconductor substrate by performing an anisotropic etching, and then a microscopic oxide film is formed by performing an anisotropic etching in such a manner that said polysilicon emitter of microscopic width will be surrounded. CONSTITUTION:An oxide film 5a is formed on a substrate isolated by an oxide film 5 by performing a CVD (chemical vapor deposition) method and the like, and the oxide film 5a located in the center part of one side of an epitaxial layer 3 is removed by performing a photoengraving etching. At this time, a vertical surface is formed on a plane surface using an anisotropic dry etching technique. Then, polysilicon 14 is deposited. Subsequently, N type impurities such as As and the like are shallowly implanted on the polysilicon 14 using an ion-implanting technique. Then, the oxide film formed by performing a CVD method and the like is removed. After an oxidization has been performed on the over all surface, an anisotropic etching is performed on the oxide film, and an oxide film 5b is left on the circumference only of the polysilicon 14. |
