| 摘要 |
PURPOSE:To enable a negative resist having constant high sensitivity to be used in in whatever exposure atom. it is used, by forming a thin metallic film high in ionization tendency as the uppermost layer of an X-ray resist and exposing this layer. CONSTITUTION:The thin film 7 made of a metal, such as K, Na, Mg, Al, or Zn, is formed on the X-ray resist 3. Since these metals have high ionization tendency and oxides tend to be formed on the surface in the air, oxygen in the air reacts with the metal film 7, and prevented from intruding into the resist 3 by interrupting it on the surface of the metal film 7. In another words, this film 7 serves as a kind of reducing agent, absorbs the oxygen in the air to form a stable film serviceable as a protective film, and prevents it from intrusion into the layer 3. The figure illustrates an X-ray source 1, an X-ray mask 2, an X-ray flux 5. As a result, allowance is given for development of the X-ray resist, and freedom can be given to the design of the system of X-ray exposure, such as exposure atm. |
