发明名称 INFRARED-RAY RADIATION THERMOMETER FOR CRYSTAL GROWING APPARATUS
摘要 PURPOSE:To detect the temperature of a substrate accurately during the period a crystal of a high vapor pressure material is growing, by providing an optical fiber, which is inserted in a super high vacuum tank for crystal growing, and providing a heater, which is formed in the vicinity of the light incident part of the optical fiber. CONSTITUTION:Infrared rays A, which are generated from a substrate 1 that is heated by a heater 4, is inputted into an optical fiber 5 through a quartz window 13. Meanwhile, the end part of the optical 5, which is located in the vicinity of the quarts window 13, is heated by a heater 6. As a result, material, which is not required for temperature measurement, can be heated and dispersed. Thus the substrate temperature can be measured stably. The infrared rays passing the optical fiber 5 is inputted to an infrared-ray-radiation thermometer head 12 and detected. Since the head 12 detects the infrared-ray-radiation, the substrate temperature can be detected even through the substrate is rotated.
申请公布号 JPS60222732(A) 申请公布日期 1985.11.07
申请号 JP19840078438 申请日期 1984.04.20
申请人 HITACHI SEISAKUSHO KK 发明人 BUTSUSHIYUU TERUO;KOMATSU SHINICHI
分类号 G01J5/08;H01L21/203;(IPC1-7):G01J5/08 主分类号 G01J5/08
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