发明名称 Method of growing crystalline cadmium mercury telluride and crystalline cadmium mercury telluride grown by the method
摘要 PCT No. PCT/GB82/00148 Sec. 371 Date Sep. 27, 1982 Sec. 102(e) Date Sep. 27, 1982 PCT Filed May 14, 1982 PCT Pub. No. WO82/04073 PCT Pub. Date Nov. 25, 1982.A method of growing crystalline cadmium mercury telluride by a vertical Bridgman process. A problem in growing such crystalline material is to produce significant quantities of material which are both of acceptable crystal quality and are of homogeneous composition. A melt of cadmium mercury telluride is prepared in a sealed ampoule, and the crystalline cadmium mercury telluride is grown from the melt by a vertical Bridgman process at a rate of from 0.1 to 2 mm per hour. During growth the ampoule is subjected to an accelerated crucible rotation programme which comprises the steps of accelerating the rate of rotation of the ampoule about is longitudinal axis and decelerating the rate of rotation of the ampoule.
申请公布号 US4551196(A) 申请公布日期 1985.11.05
申请号 US19820433131 申请日期 1982.09.27
申请人 U.S. PHILIPS CORPORATION 发明人 CAPPER, PETER;GOSNEY, JOHN J.
分类号 C01B19/00;C30B11/00;C30B29/48;H01L21/34;(IPC1-7):C30B21/02 主分类号 C01B19/00
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