| 摘要 |
PURPOSE:To enable the removal of the following resistance from a memory cell by a method wherein a high-resistance connecting the collector of a trasistor (Tr) to the emitter is formed of the base region. CONSTITUTION:A low-specific-resistance N type buried layer N<+>BL and a high- specific-resistance N type epitaxial layer N-EP form the collectors of Trs Q0, Q0', and it also acts as the base of a P-N-P TrQ3. The P<+> region connected to the X terminal and the P<+> region connected to the B terminal are connected with a P<-> region forming the high-resistance RC1. Both the P<+> regions connected to the X and B terminals act as the emitter and the collector of the TrQ3, respectively. Such a construction enables the substantial removal of high-resistance from a memory cell circuit and can reduce the occupation area of a chip. |
