| 摘要 |
PURPOSE:To attain accurately an automatic gain control extracting an electric charge from a photosensitive picture element group by making the time response characteristic when the electric charge is outputted from the photosensitive picture element to the charge storage section with that at the electric charge is outputted from a monitor photosensitive section to a floating diffusion region. CONSTITUTION:An N-channel MOS transistor (TR) T1 consists of photosensitive picture elements 21-2n, an output gate 4, its gate electrode and electric charge storage sections 31-3n and an N-channel MOS TRT2 consists of a monitor photosensitive section 8, an output gate 11, its gate electrode 12 and a floating diffusion region 9 in a solid-state line sensor. The signal electric charge of an equivalent capacitor C1 of the photosensitive picture element pases through a gate channel of the TRT1, and the signal electric charge of the capacitor C2 of the monitor photosensitive section 8 is outputted through a gate channel of the TRT2. The time response characteristic when each electric charge is outputted is made equal in the circuit above.
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