| 摘要 |
PURPOSE:To prevent the disconnection of the second wiring metal layer by a method wherein the second wiring metal layer is subjected to a heat treatment at temperatures close to the melting point of a metal, which has been contained in the second wiring metal layer, and parts of the wiring metal layer, where the thickness of the wiring metal layer is abnormally smaller, are made to fuse or soften and the film thickness of the parts is made larger. CONSTITUTION:An SiO2 film 12 is formed on the surface of a semiconductor substrate 11 and a first wiring metal layer 13 is formed on this SiO2 film 12. A second SiO2 film 15 is formed, and furthermore a second wiring metal layer 16 is formed. A heat treatment is performed on the second wiring metal layer 16 at temperatures close to the melting point of a metal, which has been contained in the metal layer 16, and the wiring metal layer 16 is performed a reflowing. By this way, the film thickness of the abnormally thicker formed film parts to generate in the second metal layer 16 can be made smaller and the film thickness of the abnormally thinner formed parts can be made larger. |
