| 摘要 |
PURPOSE:To bring the profile of impurities close to ideal one, to reduce the steps at a pattern cross-section, to reduce a photolithographic process, and to increase the accuracy of mask matching by a method wherein the isolation width between elements and the width of a source and drain is formed in accordance with the size of a mask. CONSTITUTION:In order to form the isolation width between elements and the width of a source and drain same as the size of a mask, the impurities equal to those of the source and drain are introduced in advance into the region where an element will be formed and, at the same time, the impurities are formed at a deep position. Then, elements are separated by performing an etching, and a film 10 of C, V, D-SiO2 is formed on the part where the etching is performed. Subsequently, the channel section of the element part is exposed used a resist pattern 4, and the section is removed in the depth of the impurity layer or more by performing an etching. The film 11 of C, V, D-POcySi is deposited in the groove which was etched as above, and the density is adjusted by implanting ions so that the expected VTE will be obtained. Besides, the POcySi 11 is single- crystallized using a laser beam from above the substrate. Then, a gate oxide film 13 is formed, and subsequently a C, V, D-POcySi electrode 15 is formed. |
