| 摘要 |
PURPOSE:To etch a polyimide resin film without etching an aluminum film of foundation by a method wherein a protective film is formed on the aluminum film. CONSTITUTION:After holes for bonding pads are formed in a passivation film 5 such as a silicon nitride film, etc., a silicon oxide film 6 is formed as to have thick film thickness as a protective film for aluminum films 2 according to the chemical vapor phase method, etc. After then, the pattern of a polyimide resin film 3 is formed, and the silicon oxide film 6 at the part not covered with the polyimide resin film 3 is removed according to a mixed liquid of hydrofluoric acid and acetic acid. As the protective film for the aluminum films 2, a silicon oxide film doped with phosphorus of concentration of only 1-2mol% can be also used. Moreover, as the protective film, a material having merely resistance to the etching liquid of the polyimide resin film 3 such as a silicon nitride film formed according to the plasma vapor phase chemical reaction method or a heat-resistant organic high polymer thin film, etc. is applicable. |
