| 摘要 |
PURPOSE:To produce the titled optical integrated circuit with high speed and reliability subject to excellent controllability and more productivity by a method wherein photo element comprising InxGa1-xAsyP1-y polycrystalline epitaxial layer is provided on a semiinsulating InP substrate while an electric element comprising a junction type field effect transistor (JFET) is formed on the exposed semiinsulating InP substrate other than the photo element part. CONSTITUTION:An epitaxial layer N<+> InGaAsP 12 to be a PIN photodiode, a nondope InP 13, another nondope InGaAs14 are liquid-grown on a semiinsulating Fe doped InP substrate 11. The InGaAsP layer 12 is partially exposed for making it feasible to lead out N side electrode of photodiode. An N type region 15 formed by means of dual implanting e.g. Si ion in the channel region of JFET as well as flash annealing process. Next a P type region to be a photoreceiving part 16' and a gate region 16 of FET is formed by means of implanting e.g. Zn ion as well as flash annealing process. An unified element of PIN photodiode and JFET may be produced by means of evaporating Au/Sn 17, 17', 18 as N type electrodes and Au/Zn 19, 19' as P type electrodes. |
