| 摘要 |
PURPOSE:To make the formation of N-P-N or P-N-P structure easy by a method wherein one conductive type impurity diffused layer with continuous carrier profile subject to high concentration rapidly declining near the surface but constant concentration inside is formed in the substrate and then another impurity with conductive type opposite to that of former impurity is diffused or ion-implanted. CONSTITUTION:When an Si3N4 film 6 is deposited on an Fe doped semiinsulating InP substrate 5 by plasma CVD process and after opening a diffusion window by etching process, a coating solution for forming SiO2 base film is dried up by conventional photo resist spin coating process to form an Sn doped silica glass layer 8 for diffusion process, an N type layer 9 with high concentration (n=10<19>cm<-3>) and another N type layer 10 with low concentration (n=10<17>cm<-3>) are simultaneously formed. Next after removing the silica glass 8 and the Si3N4 film 6, a junction type N-P-N transistor comprising layers 9, 12, 10 may be produced by means of forming an Si3N4 diffusion mask 11 again to form a P type layer 12 by diffusing Zn. |
