| 摘要 |
PURPOSE:To obtain an infrared detecting element, which has high sensitivity and can be manufactured easily with excellent reproducibility, by forming a current path consisting of a Hg1-xCdxTe single crystal film and an electrode terminal for supplying the current path with currents and detecting voltage onto a CdTe single crystal substrate and coating the upper surface and side surface of the current path with a CdTe film. CONSTITUTION:A Hg1-xCdxTe single crystal 22 at a predetermined composition ratio (x) is grown on a CdTe single crystal substrate 21 in an epitaxial manner. Other sections are removed through etching while leaving a region as a current path functioning as a photosensitive section and the HgCdTe single crystal 22 in the surroundings of the region as a resist 23 is used as a mask. An electrode material 26 is laminated while employing a resist pattern 25 formed in the region as the photosensitive section as a mask, and the unnecessary electrode material on the resist pattern 25 is removed. The electrode material 26 and the unnecessary section of the HgCdTe single crystal 22 are removed collectively through etching while employing the predetermined current path and a resist pattern 27 having an electrode terminal shape as masks. Lastly, a CdTe film 28 is formed on the whole surface, and the CdTe films on electrode terminals 29 are removed. |
