| 摘要 |
PURPOSE:To provide a reactive dry etching method which does not need a resist patterning by emitting a light directly above a region to be etched to ionize an etching substance, and accelerating the generated ion seeds by an electric field. CONSTITUTION:Cl2 or HCl gas 7 is flowed as etching substance from a gas inlet 5 to an exhaust port 6 in a reaction chamber 2, regulated under the prescribed pressure, a light from an Ar<+> laser 9 is emitted from the side of a transparent electrode 4 through a condensing lens 8 to a wafer 1 to ionize etching substance gas 7 of the emitted portion 10 to produce Cl<-> ions. A DC voltage is applied with the electrode 4 as a cathode from a power source 11 between the electrodes 3 and 4, the ions are accelerated by the generated electric field, emitted perpendicularly to the wafer 1 for etching. As a result, the wafer 1 is selectively etched only at the light emitted portion, and the use of a mask is unnecessitated. |
