| 摘要 |
<p>PURPOSE:To control growing speed in the titled apparatus with respect to elements or molecules by irradiating light on corpuscular radiation incident on a substrate from the light source part of an atomic absorption spectroscope, detecting the transmitted light at the photodetection part, and making use of the output signal. CONSTITUTION:During the operation of a corpuscular radiation epitaxial apparatus, in the radiation source chamber 12, useless corpuscular radiation not passing through a group of holes 16 in a cooling wall 11 are reflected by a shutter 20 or the wall and discharged 21. The residue of the useless corpuscular radiation is adsorbed on the wall 11 cooled to the temp. of a refrigerant such as liq. N2 to keep the inside of the chamber 12 at a high vacuum. In the growing chamber 13, a crystal is grown on a substrate 2 with useful corpuscular radiation 26 passed through the holes 16. Corpuscular radiation useless for crystal growth in the corpuscular radiation 26 is discharged 25 as reflected corpuscular radiation 27 or adsorbed on the wall 11 to keep the inside of the chamber 13 at at a high vacuum. The corpuscular radiation 26 is incident on the surface of the substrate 2, and an epitaxial layer is grown on the substrate 2 while keeping the emerging speed of the corpuscular radiation constant in accordance with a signal given from a photodetector 29 by atomic absorption analysis.</p> |
