发明名称 SEMICONDUCTOR PHOTODETECTOR
摘要 PURPOSE:To obtain information of high reliability by a method wherein the first active layer performing photoelectric conversion with a photoconductive film, second active layer having a signal processing circuit for binary and amplification, and third active layer having a redundant circuit which can supply right image-information by neglecting defective cells are constructed in three-dimension manner. CONSTITUTION:Photo receiving parts 11, 12, and 13 using the photoconductive film are superposed on substrates 11', 12', and 13' of the same size having binary-search and amplification sections, and a selective logical unit 14 of silicon-on- insulator structure is arranged under this lamination. In this construction, using majority logic as the selective logic in the logical unit 14, the output O corresponding to the majority logic made of -S=Low is outputted by corresponding to output V1-V3 of detecting cells 11-13. Such a manner enables the yield of right data with a fixed precision without any particular optimization system even under the mixing of defective cells, resulting in the improvement in reliability of the element; besides, the reduction in bottom area of a chip is sufficient.
申请公布号 JPS60210868(A) 申请公布日期 1985.10.23
申请号 JP19840067148 申请日期 1984.04.03
申请人 SHARP KK 发明人 NAKAMURA ISAO;NAWAKI MASARU;SHIRAISHI MASARU
分类号 G06K7/10;H01L27/06;H01L27/14;H01L27/146 主分类号 G06K7/10
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