| 摘要 |
PURPOSE:To prevent diffusion of In from a transparent electrode while a film is formed on a semiconductor layer by providing a light transmitting conductor layer formed by reaction by amorphous Si and metal on a transparent electrode and forming a semiconductor layer thereon. CONSTITUTION:A transparent electrode 6 of In-Sn oxide is formed on a glass plate 5 and a metal film of Cr is formed thereon. A P-type amorphous Si film is formed in succession on the Cr metal film. Thereafter, a light transmitting conductor layer 9 is formed by the heat processing. Moreover a P-type amorphous Si film 8 is formed thereon. Next, the I-type amorphous Si film 9 is formed on such film 8. Moreover, the N-type amorphous Si film 10 is formed on such film 9. Finally, a lower electrode 11 is formed. With such structure, diffusion of In from electrode 2 while the films 8-10 are formed can be prevented and a solar battery having high photoelectric conversion efficiency can be obtained. |
