| 摘要 |
<p>PURPOSE:To obtain the device of large output signal and uniform picture-quality by a method wherein a photoconductive layer in the photo reception surface for an image pickup device having a transparent conductive film and the photoconductive layer is made of amorphous Si containing a required amount of hydrogen atoms, and the optical forbidden band width of this layer and the number of infrared absorption peak waves are made specific. CONSTITUTION:A glass substrate 11 optically polished is provided with a clear electrode 12 of Sn oxide of about 300nm thickness, and this substrate is put in a sputtering device and made opposed to an Si target. Next, a container constituting the device is evacuated to 10<-2>-10<-3>Torr, and discharge is generated by impressing a high frequency power of about 300W on the target, resulting in the deposition of an amorphous Si layer 13 on the substrate 11. Then, a Schottky electrode 14 is mounted thereon. At this time, the substrate 11 is heated to about 200 deg.C, and the rate of hydrogen in the mixed gas is restricted to 5-20atom%. Further, the optical forbidden band width of the Si layer 13 is set to 1.5-1.9eV, and the component of the number of infrared absorption peak waves ascribed to the mode of stretching vibration for the coupling of Si with H2 is set at a strength of 2,000-2,100cm<-1>, or the maximum peak is selected at 2,000cm<-1>.</p> |
