发明名称 High resolution lithographic resist and method
摘要 A negative working resist composition and medium for microlithographic recording comprises a vinyl polymer having aromatic quaternized nitrogen-containing pendant groups. The resist undergoes a transformation from high to low solubility in polar solvents such as water or low molecular weight alcohols upon exposure to electron beams, ultraviolet light, or X-rays. A method for patterning substrates by employing the resist composition is also disclosed.
申请公布号 US4548893(A) 申请公布日期 1985.10.22
申请号 US19840609163 申请日期 1984.05.11
申请人 GTE LABORATORIES INCORPORATED 发明人 LEE, KANG I.;JENSEN, WILLIAM;CUKOR, PETER
分类号 G03F7/008;(IPC1-7):G03F7/10;G03G5/16 主分类号 G03F7/008
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