| 摘要 |
PURPOSE:To evaluate an element substrate for each collected wafer and to improve the yield by using the conductor and drive film patterns for evaluation test to evaluate the quality of an insulated film. CONSTITUTION:Patterns 11 and 13 having shape slown in top view are set opposite to each other in their thickness direction via an insulated film, and a belt-shaped pattern 12 is set at the middle of the thickness direction of the insulated film. These patterns 11-13 are formed so that they are partially set opposite to each other in the thickness direction. At the same time, terminal parts 11a-13a having exposed upper surfaces are formed at an end of each pattern. For these patterns 11-13, probe pins are abutted to the parts 11a-13a to measure the electrostatic capacity of insulated films 5, 7 and 14 respectively. It is checked to decide whether a dielectric constant epsilon clears a prescribed level or not to evaluate the insulated films. Then an evaluation pattern is formed together with an element pattern at oblique line areas 23 where the collection is impossible with a magnetic bubble memory element substrate for a wafer 21 that collect plural said element substrates. Thus the evaluation of insulated films is possible without decreasing the number of element substrates that can be collected from a single sheet of wafer. |
