| 摘要 |
PURPOSE:To facilitate the change of characteristics, by connecting base contact parts to an extracting base electrode selectively, or connecting an individual emitter region to an extracting emitter electrode selectively. CONSTITUTION:On one chip, the following parts are provided that is a plurality of emitter regions 3, a base region 2 which has a plurality of base contacts around said emitter regions, extracting base electrode B and an extracting emitter electrode E. Of a plurality of base contact parts, an arbitrary number of the contact parts are connected to the extracting base electrode. An arbitraray number of a plurality of emitter regions are connected to the emitter electrode. When the base contacts are selectively extracted to the outside, the function in a small collector current region is the same as that when all the base contacts are connected to the extracting electrode. In a large collector current region, however, a difference is yielded between a base current bath and a collector current path. Therefore, the value of the collector current, which imparts the maximum DC amplification factor hFE, becomed different. |
