METHOD OF APPLYING FOCUSING ION BEAMS

摘要

PURPOSE:To implant impurity ions in a fine pattern and to reduce the ion implanting time, by implanting the impurity ions directly in a semiconductor substrate with a plurality of ion beams. CONSTITUTION:When a shutter 20 is opened, impurity ions which have become plasma state in an ion source 21 are introduced to an accelerating system 23 through a plurality of apertures 28. The impurity ion beams which have become parallel ion beams are accelerated properly by the accelerating electric field in this system and enter into a deflecting system. This deflecting system is controlled by the electric fields generated by electrodes 25 and 24 both for the X-axis and Y-axis directions, and therefore the implantation of the impurity into a semiconductor substrate 27 in a material chamber 26 can be controlled by controlling the strength of these electric fields. A plurality of parallel ion beams 33 are thus caused to scan simultaneously so that those ions can be implanted directly into a plurality of chips 34 on the semiconductor substrate 31 simultaneously and in the same pattern. In such a manner, the period of time required for implanting ions is decreased.