| 摘要 |
PURPOSE:To obtain the lower resist pattern having an excellent shape in a two- layered resist structure, by shaping the upper resist pattern into an inverted trapezoid. CONSTITUTION:An ultraviolet light resist is used as the upper resist and a far- ultraviolet light resist is used as the lower resist 12. A pattern 23 of the upper resist, which should have an inversed trapezoidal cross section, is used as a mask for forming a pattern 25 of the lower resist. The pattern 23 serves as a concave lens so that the light entering near the edges of the pattern 23 goes out of the pattern 23, and therefore no light enters into the base of the pattern 23 from the edges. In such a manner, the lower resist 12 is provided with a trapezoidal pattern 25 when developed. |
