| 摘要 |
PURPOSE:To prevent the increase of base-collector capacitance by directly leading out a base electrode from an active base region, forming one part of an emitter electrode by a polysilicon film and boring a contact hole for shaping a metallic silicide film in a base. CONSTITUTION:An oxide film 106 and a PSG film 401 are formed on the surface of a polysilicon film 601. An oxide film 105 as one part and the PSG film 401 are removed, a polysilicon film 602 is applied, and N<+> type layers 71 and 81 are shaped. A thick film 108 and a thin oxide film 107 are formed. A metallic layer is removed through etching. A contact hole 50 for a base electrode, a contact hole 70 for an emitter electrode and a contact hole 80 for a collector electrode are formed, and a base electrode wiring 9, an emitter electrode wiring 10 and a collector electrode wiring 11 are shaped by a low resistance metal. Since there is not external base layer in high impurity concentration, capacitance between a base and a collector can be reduced, and a transistor having excellent frequency characteristics is obtained. |
