| 摘要 |
PURPOSE:To prevent the generation of disconnection or short circuit by a method wherein a metal which can form the silicide is added into Al, and a layer preventing the increase of Si is provided between the Al layer and an Si layer. CONSTITUTION:An Al wiring pattern is formed on an Si substrate and on an Si layer such as a polycrystalline Si layer formed on the Si substrate by adding an element forming a compound with Si into Al. In this case, a layer of transition metal or of the compound of transition metal with Si is interposed between the wiring of the connection between the Si substrate or the polycrystalline Si. This manner prevents electromigration and the like and the reaction of Si with the wiring, thus blocking faults generating with the above-mentioned addition of metal. As a result, there is no possibility of disconnection or short circuit, and the micro electrode wiring for the semiconductor device having high reliability can be realized. |
