| 摘要 |
PURPOSE:To improve mounting density, by using unused or used semiconductor elements, which are provided in a semiconductor device and unused region other than wirings, forming a smoothing capacitor for stabilizing a power source voltage, thereby reducing an area required for providing the smoothing capacitor. CONSTITUTION:A smoothing capacitor is formed by using extra semiconductor elements in a basic cell 8A. At this time, a junction capacity between an embedded layer 34 and a semiconductor substrate 5, a junction capacity between an epitaxial layer 35 and bases 11C and 14C and a junction capacity between emitters 11B and 14B and the bases 11C and 14C are used. The base regions 11C and 14C are electrically connected to a conducting layer 22 at a Vee potential through a connecting hole 19 by a conducting layer 18. Collector regions 11A and 14A and the emitter regions 11B and 14B are electrically connected to a conducting layer 23 at a Vcc potential through a connecting hole 21 by a conducting layer 20. The conducting layers 22 and 23 are the second conducting layers. |
