| 摘要 |
PURPOSE:To reduce an area that an MOSTr occupies, and to improve the withstanding voltage of the MOSTr by coating a region, which is formed adjoined to a drain region and has low impurity concentration, with a conductor layer connected to a drain. CONSTITUTION:The point which the above-mentioned constitution differs from conventional devices is the fact that the area of an Al layer 8 as a gate is reduced remarkably and an Al layer 7 as a drain is extended largely in the direction of a channel in place of the remarkable reduction of the area of the Al layer 8 and a distance between a source and the drain is shortened only by a space dAA+dAC. The Al layer 7 connected to a drain region 3 is extended largely in the direction of the channel. Since a weak P type region 4 is formed to a section between the drain and the gate, in which the intensest electric field appears on operation, and the region 4 is coated with the Al layer 7 to which the drain is connected, the secular change of the weak P type region 4 is prevented effectively while the size of an element can be minimized. |
