| 摘要 |
PURPOSE:To uniform processings within a sample by surrounding the external circumference of surface of sample to be processed with inactive gas on the occasion of processing a sample by etching after the reaction gas is changed to gas plasma under a reduced pressure ambient. CONSTITUTION:An upper electrode 20 and a lower electrode 30 opposed to each other are provided within a vacuum case 11 and a wafer 60 to be etched is placed on the lower electrode 30. A plasma processing apparatus is thus formed, reaction gas supplied from a reaction gas bomb 21 is injected from many gas supply holes 24 provided at the lower surface of upper electrode 20 through a flow rate control device 22 and a gas flow path 23, and plasma is thereby generated between the electrodes 20 and 30 in order to etch the wafer 60. With such a structure, an inactive gas bomb 25 is newly provided and the inactive gas supplied therefrom is injected from the external circumference of wafer 60 through the gas flow rate control device 26 and gas flow path 26 extending through the support axis of electrode 30. Thereby, the wafer 60 is surrounded by inactive gas and the gas is then exhausted from an exhaustion nozzle 10 at the bottom of case 11 through the gap 41. |
